The Z-MOS MOSFETs are a new class of unique, high power, high voltage, bias stable RF transistor. The family has been designed as a circuit element from the ground up, for high frequency, high power applications. The IXYS RF Communications MOSFET family is ideal for MRI applications operating up to 3T.

The Z-MOS die technology offers unrivaled cost per watt by combining the advantageous of a bias stable, high voltage (150V operating) MOSFET technology with the exceptional RF & thermal characteristics of the DE Series package.

In addition, IXYS RF now offers the traditional 50V RF MOSFET packaged in the DE Series package family. The result is improved RF & thermal performance at a much reduced cost combined with long term product availability that the traditional pill and flange versions can not rival.

The DE Series package features low insertion inductance (1.5nH), and a low profile package, with R(theta)JHS as low as 0.17¼C / W, which provides exceptional high frequency and power handling capabilities.

The IXZ210N50L Linear Z-MOS datasheet is characterized for MRI operation. The following data was obtained under pulsed conditions (5mSec, 5%) with a gated Bias in Class AB, at P1dB.