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Press Releases
IXYS Introduces DEIC515 Gate Drive IC Santa Clara, California November 20, 2006. IXYS Corporation (NASDAQ SYXI), a leader in power semiconductors for power conversion and motion control applications, announced today the introduction of the DEIC515. The DEIC515 is a MOSFET gate driver for RF applications requiring high currents and fast switching speeds. The DEIC515 has very low propagation delays (about half of standard drivers), repeatable threshold levels, fast switching and high drive current. The propagation delay (~17ns) is reduced by eliminating the level translator in the input circuit. This also allows for repeatable threshold levels. Problems associated with very high currents at high switching speeds are eliminated by using Kelvin connection to the input sections. The output section can supply peak currents up to 15A and switching speeds of less than 3 ns. Operation can be useful up to 30 MHz when driving a MOSFET with Ciss of 1000 pF. When used as a pulse device, pulse widths as small as 6 ns can be generated. The driver has applications in the RF and power electronics industries. Class D and E Switching RF Amplifiers, Multi-megahertz DC to DC Converters and Switch-Mode Power Supplies, Pulse Transformer Drivers, Pulse Generators, Pulsed Laser Diode Drivers and Acoustic Transducer Drivers are a few of the applications well suited to the DEIC515. The 1000 piece price for the DEIC515 is $20.89, and is available through your local authorized IXYS /IXYSRF sales representative or, or from IXYS RF , www. IXYSRF .com, an IXYS Company, Tel. (970) 493-1901, Fax (970) 493-1903, Email sales@IXYSRF.com. Statements in this press release regarding IXYS' business that are not historical facts are "forward-looking statements" that involve risks and uncertainties, including, but not limited to demand for the Company’s products, the ability of the company to develop, manufacture, and market new products, demand by end-users for the products produced by the Company's customers, and the other risks detailed from time to time in the Company's reports filed with the Securities and Exchange Commission. >>Back to Top IXYS RF Introduces Ultra High Speed Laser Diode Driver IC FORT COLLINS, CO., November 21, 2002 -- IXYS RF Incorporated (IXYS RF), a leading edge supplier of high frequency and pulse power products, and a wholly owned subsidiary of IXYS Corporation (NASDAQ: SYXI), announced the introduction of the IXLD02SI ultra high speed differential laser diode driver IC. This device features new performance levels, with higher output power and programmable modulation capabilities. The IXLD02SI provides 2 Amps of output drive current, at frequencies up to 17 MHz, with 600 picoseconds of rise time. This equates to a current rise time rate of 3.33 Amps per nanosecond. The IXLD02SI is a groundbreaking innovation in laser diode driver technology, giving unmatched real time control of modulation, while providing pulse width & frequency agility. The IC was designed specifically to drive single junction laser diodes in a differential fashion. Q and Q-bar outputs make their transitions simultaneously in picoseconds. "The IXLD02SI is the latest addition to our developing family of unique Driver IC's. This product is a manifestation of our commitment to innovate rather than duplicate," explains Ron Sherwood, President of IXYS RF. "This is an extension of the innovation we demonstrated with the introduction, of the high power IXYS RFC420 power MOSFET and IGBT gate drive IC which features a unique peak output current of 20 amps and operating frequencies of up to 45MHz. These products are a result of the combined R&D cooperation between IXYS RF and the IXYS team in California." The IXLD02SI can be used in many applications including high speed laser diode drivers, high power ultra fast line drivers, differential power drivers, high power pulse generators and high speed and high frequency modulators. Also available is the EVLD02 evaluation board with the IXLD02SI factory installed. The evaluation board enables the user to evaluate the performance of the IXLD02SI driver as well as to provide a building block for circuit development. The data sheet for both the driver and evaluation board can be downloaded via the IXYS RF web site. Products are available from stock. For pricing information and prototype and volume production delivery information contact IXYS RF, www.ixysrf.com, telephone (970) 493-1901, email: mlincoln@directedenergy.com. About IXYS RF IXYS RF is a leading supplier of high-speed, high-power laser diode drivers, pulse generators, power integrated circuits and high voltage RF MOSFETs. The company's FAST POWERTM product family utilizes their patented, low inductance, high power, plastic package portfolio combined with industry leading MOSFET technology, offering unrivaled electrical and thermal performance in high speed switching applications. IXYS RF, Inc. is a wholly owned subsidiary of IXYS Corporation, a leading supplier of semiconductors and modules for the global power market. Additional information about IXYS RF and IXYS can be found at www.ixysrf.com and at www.ixys.com, or by contacting the Company directly. >>Back to Top IXYS Introduces Direct Aluminum Bonded "DAB" Technology For Power Semiconductor Integration Santa Clara, CA, October 30, 2002. IXYS Corporation (NASDAQ: SYXI), a leading supplier of power semiconductors and ICs for power conversion, motor control, medical electronics and telecommunication applications, announces the introduction of the Direct Aluminum Bonded (DAB) substrate technology. This technology is more advanced than the state of the art DCB (Direct Copper Bonded) technology, which has been used for the production of integrated power semiconductor modules, including motor drives, DC to DC converters and power supply "bricks". The Direct Metal Bonded (DMB) technology offers highly reliable substrates with electrical isolation and high thermal conductivity onto which power semiconductor chips are soldered to create the high power modules. Prior generation DMBs were basically DCBs where copper has been the main conductor that is bonded to alumina or aluminum nitride ceramics. In the DAB technology, aluminum is the conductor, and it forms a more rugged and reliable bond to the ceramic, therefore resulting in better thermal cycling performance as demanded by critical power control applications in the automotive, aerospace and industrial applications. The aluminum layer is patterned much the same way that copper is patterned in a standard DCB and printed circuit boards, and is plated with solderable metals for ease of use. DAB substrates are also lighter than their DCB counterparts, offering 37% to 64% weight savings as a substrate. "We have already shipped DAB substrates to our customers, and are in the process of expanding the product line," commented Ron Sherwood President of DEI, IXYS' wholly owned subsidiary in Colorado that manages the sales of IXYS' DCB and DAB substrates. "The unique properties of our DCB and DAB are listed in our new product flier, and allows the user to choose the substrate of choice. For mission critical applications with expanded temperature cycling requirements we recommend DAB." Deliveries of sample quantities are from stock with production quantities available in 8 - 16 weeks. For further information, contact your local authorized IXYS distributor or sales representative or DEI at Tel: (970) 493-1901 ext. 24, or by email info@ixysrf.com or sales@ixys.com. Information about IXYS and its subsidiaries can be found at www.ixys.com or www.clare.com. IXYS Subsidiary Introduces High Speed, Power RF GaAs Diodes FORT COLLINS, Colo.--(BUSINESS WIRE)--Jan. 14, 2003--Directed Energy, Inc. (DEI), a wholly owned subsidiary of IXYS Corporation (NASDAQ: SYXI - News), announced that it has developed and introduced a family of High Speed, High Voltage, GaAs Schottky Diodes with extremely fast recovery times. This new product line offers unprecedented recovery time performance while exhibiting a low forward voltage drop, making it ideal for high frequency switch mode power supplies, high frequency converters, resonant converters and other applications requiring faster recovery than is currently available in Ultrafast and silicon carbide devices. The portfolio contains products for currents of 4A, 10A, 20A, 30A, and 50A, (A - amperes), with voltage ratings of 250v. The devices can be "stacked" for applications requiring higher breakdown voltages. Each device contains three diodes in three different configurations: triple independent, triple common cathode, and triple common anode. The new product line takes advantage of the low inductance, low profile, electrically isolated, surface mount, DE-150 package. The DE-150 package utilizes a direct copper bonded aluminum nitride substrate, which has a closely matched thermal coefficient of expansion to that of the GaAs diode, resulting in improved reliability and power cycling performance. Michael Lincoln, DEI's Director of Marketing, commented, "This new portfolio brings an economical high performance alternative to silicon carbide for those applications requiring extremely fast recovery performance and low forward voltage characteristics. Further, because these GaAs Diode products utilize the same high performance, patented, low inductance, isolated package as our RF MOSFETs, we offer consistent and simple 'single plane' thermal to heat sink coupling at reduced cost to our customers." "The GaAs chips in these devices are designed and manufactured internally by IXYS. This new product introduction is in concert with our strategy of expanding the solutions for RF & switching applications beyond our traditional core products. This allows us to harness our system RF knowledge and bring added value to the markets and customers we already serve," explains Ron Sherwood, President of DEI. This product is available from Directed Energy, Inc (DEI), www.directedenergy.com, a wholly owned subsidiary of IXYS Corporation, telephone (970) 493-1901, email mlincoln@directedenergy.com |
