Description
This new line of High Speed GaAs Schottky Diodes provide extremely fast recovery times, outperforming both Ultrafast and Silicon Carbide technologies. The recovery times and low junction capacitances combined with their inherently low forward voltages make this new product family idea for High Frequency Converters, Resonant Converters and Switch Mode Power Supplies operating from the KHz-MHz range.
The GaAs devices are packaged in the low inductance, low profile, electrically isolated, surface mount DE-150 package. The matched thermal coefficient of expansion between the aluminum nitride substrate and the GaAs Schottky Diode result in improved reliability and power cycling performance.
Each device contains three diodes, with three different configuration options; Triple Independent, Triple Common Cathode, and Triple Common Anode.
The IXYS RF GaAs Schottky Diode Advantage
- Faster Reverse Recovery Time than UltraFast and Silicon Carbide
- Much lower forward Voltage than Silicon Carbide
- Isolated, low inductance, surface mount, high power package
600v Schottky Diodes & 1200v Schottky Diodes
Coming: A full line of 600v GaAs Schottky Diodes & 1200v GaAs Schottky Diodes for those applications requiring higher VRRM!
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