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The Z-MOS MOSFETs are a new class of unique, high power, high voltage, bias-stable RF transistors (HF linear MOSFETs and VHF Linear MOSFETs). The family has been designed as a circuit element from the ground up, for high frequency, high power applications.
The Z-MOS die technology offers unrivaled cost per watt by combining the advantages of a bias-stable, high voltage (150V operating) MOSFET technology with the exceptional RF & thermal characteristics of the DE Series package.
The IXYS RF Communications MOSFET family is ideal for HF high power applications and VHF high power applications, including MRI, 2-30MHz Communications, VHF Communications, and FM Broadcast.
In addition, IXYS RF now offers the traditional 50V RF MOSFET packaged in the DE- Series package family. The result is improved RF & thermal performance at a much-reduced cost, combined with long-term product availability
that the traditional pill-and-flange versions cannot rival. The DE-Series package features low insertion inductance (1.5nH), and a low profile package, with R(theta) JHS as low as 0.17¼C / W, which provides exceptional high
frequency and power handling capabilities.
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